fea tures wide receiving angle variety of sensitivity ranges side-looking package for space limited applications base-emitter resistor provides ambient light protection de scrip tion the op755 device consists of a npn silicon phototransistor molded in blue tinted epoxy packages. the wide receiving angle provides relatively even reception over a large area. the side- looking package is designed for easy pc board mounting of slotted optical switches or optical interrupt detectors. the series is mechanically and spectrally matched to the op140 and op240 series of infrared emitting diodes. the phototransistor has an internal base- emitter resistor which provides protection from low level ambient lighting conditions. this feature is also useful when the media being detected is semi- transparent to infrared light in interruptive applications. ab so lute maxi mum rat ings (t a = 25 o c un less oth er wise noted) collector- emitter volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 v emit ter re verse cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 ma col lec tor dc cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 ma stor age and op er at ing tem pera ture range . . . . . . . . . . . . . . . . . . -40 c to +100 c lead sol der ing tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 c (1) power dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mw (2) notes: (1) rma flux is rec om mended. du ra tion can be ex tended to 10 sec. max. when flow sol der ing. max. 20 grams force may be ap plied to leads when sol der ing. (2) derate linearly 2.0 mw/ c above 25 c. (3) light source is an unfiltered gaas led with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) the knee point irradiance is defined as the irradiance required to increase i c(on) to 50 m a. typi cal per form ance curves prod uct bul le tin op755 june 1999 npn pho to tran sis tor with base- emitter resistor types op755a, OP755B, op755c, op755d op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (97 2) 323- 2200 fax (972) 323- 2396 typical spectral response wavelength - nm 9 sche matic
types op755a, OP755B, op755c, op755d op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (972 )323- 2200 fax (972)323- 2396 elec tri cal char ac ter is tics (t a = 25 o c un less oth er wise noted) sym bol pa rame ter min typ max units test con di tions i c(on) on-state collector current op755a OP755B op755c op755d 1.80 1.20 0.70 0.70 5.50 3.40 2.25 5.50 ma v ce = 5 v, e e = 1.0 mw/cm 2(3) e kp knee point irradiance .2 mw/cm 2 v ce = 5 v (4) i ceo collector-emitter dark current 100 na v ce = 10 v, e e = 0 i eco emitter-reverse current 100 m a v ce = 0.4 v v (br)ceo collector-emitter breakdown 30 v i c = 100 m a v ce(sat) collector-emitter saturation voltage 0.4 v i c = 100 m a, e e = 1 mw/cm 2(3) typi cal per form ance curves 10 q - angular displacement - deg. normalzied light and dark current vs. ambient temperature t a - ambient temperature - c switching time test circuit on-state collector current vs. irradiance e e - irradiance - mw/cm2 test conditions: light source is pulsed led with t r and t f 500 ns. i f is adjusted for v out = 1 volt. normalized collector current vs. angular displacement dark current v ce = 5 v op555 op755 frequency - khz normalized output vs. frequency r l = load resistance - k w typical rise and fall time vs. load resistance v cc = 5 v v rl = 1 v f = 100 hz pw = 1ms r l = 10k w r l = light current 1.0 0.5 0.0 1 10 100 1000 2 4 6 8 10 100 10 1 .1 .01 .001 .0001 .00001 .001 .01 .1 1 10 120 105 90 75 60 45 30 15 0 0 v rl = 1 v v ce = 5 v 50% duty cycle led: l = 935 nm led = gaaias, l = 890 nm v rl is voltage across r l
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